semiconductor rohs rohs NKET161 series major ratings and characteristics symbol characteristics i t av ( ) 85 c i t rms ( ) a i tsm 50 hz 60 hz i t 2 50 hz ka 2 s 60 hz i 2 t range t j range 85 c units values a ka s 2 c v 160 251 5400 5670 146 133 1458 400 to1600 40to125 n high power products ell page1of3 phase control thyristor, 160a ( ) new int a pak power modules features ? high voltage ? ( electrically isolated by dbc ceramic ai 2 3 o ) ? 3500 v rms isolating voltage ? industrial standard package ? high surge capability ? glass passivated chips ? / modules uses high voltage power thyristor diodes in two basic configurations ? simple mounting ? ul approved file e320098 ? compliant to rohs ? designed and qualified for multiple level applications ? dc motor control and drives ? battery charges ? welders ? power converters ? lighting control ? heat and temperature control product summary i t av ( ) 160 a new int a pak - - alldimensionsinmillimeters 0.8 7+0.5 29+1 36+2 - - 24 2screwsm6 12+1 34+2 46 6.5 2.8x0.8+0.1 15+1 80+1 94+1 - - 9 k g 1 3 v drm rrm /v
page2of3 semiconductor rohs rohs forward conduction parameter symbol test conditions maximum average onstate current at case temperature i t av ( ) 180 , conduction half sine wave ,50hz maximum rms on state current i t rms ( ) a maximum peak one cycle, , on state non repetitive surge current i tsm t ms = 10 no voltage reapplied sine half wave, initial t j = t j maximum t ms = 8.3 maximum i 2 t for fusing i 2 t ka 2 s maximum i 2 t for fusing i 2 t t ms to ms no = 0.1 10 , voltage reapplied maximum on state voltage drop v tm i tm = 480a , t j = 25 , 180 c conduction maximum holding current i h anode supply v initial i = 12 t = 30 ,a t j =25 c ma maximum latching current i l anode supply v resistive load = 12 = 1 gate pulse v s t : 10 , 100 , j = 25 c 400 blocking parameter symbol test conditions values maximum peak reverse and off state leakage current i rrm , i drm t j = 125 c rms isolation voltage v iso 50 , , hz circuit to base all terminals shorted v critical rate of rise of off state voltage dv dt / t j = t j , maximum exponential to rated v 67 % drm / v s v units electrical specifications voltage ratings type number voltage code v rrm / v drm , maximum repetitive peak reverse voltage v v rsm / v dsm , maximum non repetitive peak reverse voltage v i rrm / i drm at c 125 ma nket160 04 400 500 20 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 180 , conduction half sine wave ,50hz ,t = 85 c j values 160 85 251 5400 5670 146 133 1458 1.65 40~150 a c 30 2500(1min) 500 ma n high power products ell t ms = 10 t ms = 8.3 t ms = 10 t ms = 8.3 ka 2 s 102 93 reapplied 100%v rrm 3500(1s) units NKET161 series
page3of3 semiconductor rohs rohs n high power products ell fig.1onstatecurrentvs.voltagecharacteristic fig.2transientthermalimpedance(junctioncase) fig.3powerconsumptionvs.averagecurrent fig.4casetemperaturevs.onstateaveragecurrent fig.5onstatesurgecurrentvscycles fig.6gatecharacteristics onstatepeakvoltage(v) transientthermalimpedance( c/w) maximumpowerconsumption(w) asetemperature( c) onstatesurgecurrent(ka) gatevoltage(v) t =125 c j 5 4.3 3.6 2.9 2.2 100 1000 10000 0.18 0.15 0.09 0.06 0.03 0.00 0.001 0.01 0.1 1 10 140 120 100 80 60 40 20 0 0 50 100 150 200 250 30 60 90 120 180 conductionangle 0 180 30 60 90 120 180 conductionangle 400 350 300 250 150 100 50 0 0 50 100 150 200 6 5 4 3 2 1 1 10 100 cycles@50hz gatecurrent(ma) onstatecurrent(a) time(s) onstateaveragecurrent(a) onstateaveragecurrent(a) maximumgatevoltagethatwillnottriggeranyunit 125 c 25 c 30 c peakforwardgatevoltage(10v) 2 10 1 5 2 10 0 5 2 10 1 2 10 1 5 2 10 2 5 2 10 3 5 peakgatecurrent(3a) peak gate power(10w) average gate power(3w) 1.5 0.8 0.12 200 0 180 300 NKET161 series
|
